Fabrication of Indium Oxide thin films sensor for H2S

  1. H. N. Kapse1,
  2. B. H. Lashkari 2 and
  3. K. K. Makhija3

1 Instrumentation & Control Department - Institute of Science & Technology for Advanced Studies & Research (ISTAR), Vallabh Vidyanagar - 388120, Gujarat, India.
2 Electronics Department - V. P. & R. P. T. P. Science College, Vallabh Vidyanagar - 388120, Gujarat, India.
3Retired Reader in Electronics, Guest Editor-Sensors &Transducers, A/5 Kalikundnagar Society, Bakrol, Dist: Anand – 388315, Gujarat, India.

  1. Corresponding author email

Associate Editor: T. Kaur
Science and Engineering Applications 2017, 2, 125–127. doi:10.26705/SAEA.2017.2.5.125-127
Received 25 Feb 2017, Accepted 5 Apr 2017, Published 5 Apr 2017

  • Full Research Paper

Abstract

The present work is based on fabrication of Indium oxide with Tellurium dispersed thin film sensor for H2S gas application. The study reveals capability of Indium Oxide (IO) thin films as selective H2S gas sensor when Tellurium (Te) layer was dispersed. The inbuilt heater was fabricated from Indium Tin Oxide (ITO) thin films. Sensor showed promising results as the study of sensitivity was carried out for different concentrations of H2S gas. The ratio of electrical conductance when, the sensor is operating at a higher temperature and to that at lower temperature is unaffected by water vapour but is sensitive to H2S species. Hence the detrimental effects of humidity on the sensing properties of the IO thin film gas sensors are almost negligible on H2S . The gas sensor was operated at concentrations of 40, 100, 200 & 400 ppm of H2S gas at room temperature and was found to have good sensitivity and fast response.

Keywords: H2S Gas Sensor; Indium Oxide; Thin films

© 2017 Salamon et al.; licensee Beilstein-Institut.
This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (http://www.jfips.com/saea)

 
Back to Article List