Optical and Electrical properties of Sn-Doped Cadmium Oxide Thin Films Grown by Chemical Bath Deposition Technique

  1. Gbadebo Taofeek Yusuf 1,
  2. Babatunde Keji Babatola 2
  3. Abdul Dimeji Ishola 3
  4. Segun Rotimi Oladimeji 4
  5. Joshua Toyin Adeleke 5
  6. Adebukola Ayoade Adedeji 6

1 Faculty of Science, Osun State Polytechnic, Iree, Nigeria
2 School of Vocational and Technical Education, Department of Technical Education, Osun State College of Education, Ila-Orangun, Nigeria
3Electrical/Electronics, Osun State College of technology, Esa-Oke, Nigeria
3Faculty of Science, Engineering and Technology. Department of Mathematical and Physical Sciences, Physics with Electronics unit. Osun State University, Osogbo, Nigeria

  1. Corresponding author email

Associate Editor: T. Kaur
Science and Engineering Applications 2017, 1, 95–26. doi:10.26705/SAEA.2016.1.23.92-95
Received 18 Dec 2016, Accepted 02 Feb 2017, Published 02 Feb 2017

Abstract

The structural, optical and electrical properties of the films at different doping concentrations of 0, 2, 4, and 6 % have been investigated using chemical bath deposition technique. Cadmium acetate di-hydrate was used as precursor for preparation of the CdO thin films and Tin (II) chloride was employed as a tin source. The XRD patterns revealed a polycrystalline having the characteristic peaks of cubic structure. Transmittance of the CdO films increases with increasing Sn dopant in the films, and the maximum transmittance of 84% was seen at 4% doping concentration. The above observation was confirmed by AFM study which depicts uniform and homogeneous, thin films at 2 and 4 % at Sn doping concentrations. The average bandgap energy of tin oxide was 2.30eV and this value is bigger than that of pure CdO 2.22eV. This implies that the tin doping can be used as a regulator of the bandgap of CdO films. Hall mobility, carrier density of Sn: CdO films show variation with Sn: CdO doping concentration such that carrier concentration and mobility show the maximum at 4% doping concentration. The films grown at 4% in this work is a promising candidate for solar cell applications.

Keywords: Cadmium oxide, tin, electrical, transmittance, optical band gap.

 
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