A density functional theory (DFT) employing generalized gradient approximation (GGA) have been used to study the electronic and optical properties of AlSb. The transition along Γ point predict this material to be a direct band-gap semiconductor. The presence of band gap 1.0-2.0 eV shows great interest due to their band gap matching with the optimized incident photon energy (UV-range). Also the presence of hybrid bands at the maxima of the valence region, that is the combination of the sharp and the flat bands enhances the electron transports. Thus AlSb can be a better prospectus for solar cell devices.
Keywords: Semiconductor, band gap, GGA, GGA-SO, FPLAPW .